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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
April 2008
FGA25N120FTD
1200V, 25A Field Stop Trench IGBT
Features
* Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) =1.6V @ IC = 25A * High input impedance * RoHS complaint
tm
General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Applications
* Induction heating and Microvewave oven * Soft switching applications
C
G
TO-3P
GCE
E
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IC PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode continuous Forward current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 100oC @ TC = 25 C @ TC = 100oC
o
Ratings
1200 25 @ TC = 25oC 50 25 75 25 313 125 -55 to +150 -55 to +150 300 @ TC = 100oC
Units
V V A A A A W W
o o o
C C C
Notes: 1: Repetitiverating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.4 1.42 40
Units
o o o
C/W C/W C/W
(c)2008 Fairchild Semiconductor Corporation
1
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FGA25N120FTD Rev. A
FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA25N120FTD
Device
FGA25N120FTDTU
Package
TO-3PN
Packaging Type
-
Max Qty Qty per Tube
-
per Box
30
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125oC 3.5 6 1.6 1.88 7.5 2 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 3830 130 86 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 25A, VGE = 15V VCC = 600V, IC = 25A, RG = 15, VGE = 15V, Inductive Load, TC = 125oC VCC = 600V, IC = 25A, RG = 15, VGE = 15V, Inductive Load, TC = 25oC 48 96 210 215 0.34 0.90 1.24 44 113 232 390 0.38 1.39 1.77 160 30 78 1.20 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage IF = 25A
Test Conditions
TC = 25oC
o
Min.
-
Typ.
1.4 1.42 770 895 48 50 18 23
Max
1.8 -
Units
V
TC = 125 C TC = 25oC TC = 125oC
o
Diode Reverse Recovery Time IES =25A, dIES/dt = 200A/s
ns
Diode Reverse Recovery Time
TC = 25oC TC = 125 C TC = 25oC TC = 125 C
o
A C
Diode Reverse Recovery Charge
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V 17V
15V
150
Collector Current, IC [A]
20V 17V
15V
120 90 60 30
8V
12V
120
12V
90 60 30
10V 9V 8V 7V VGE = 6V
10V 9V 7V VGE = 6V
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
Figure 3. Typical Saturation Voltage Characteristics
120
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
120
Common Emitter VCE = 20V
Collector Current, IC [A]
90
Collector Current, IC [A]
TC = 25 C TC = 125 C
o
o
TC = 25 C
o
90 T = 125oC C
60
60
30
30
0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 5
0 0 3 6 9 12 Gate-Emitter Voltage,VGE [V] 15
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V 50A
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter TC = 25 C
o
2.7 2.4 2.1
16
12
25A
1.8 1.5
IC = 10A
8
50A
1.2 0.9 25
4
25A IC = 10A
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
6000 5000
Capacitance [pF]
Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
4000 3000 2000 1000 0
Coes
12
8
4
IC = 10A
25A
50A
Cres
0 0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
1
10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
200 100
10s
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
VCC = 200V
Collector Current, Ic [A]
600V 400V
100s
10
1ms 10 ms
9
1
DC
6
3
0.1
*Notes: o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
0 0 50 100 150 Gate Charge, Qg [nC] 200
0.01 1 10 100 1000 3000 Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs. Gate Resistance
500
Figure 12. Turn-off Characteristics vs. Gate Resistance
5500
Common Emitter VCC = 600V, VGE = 15V IC = 25A
Switching Time [ns]
Switching Time [ns]
tr
TC = 25 C
o
1000
TC = 125 C
o
td(off)
100
td(on)
Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C
o o
tf
100 50
10 0 20 40 60 80 Gate Resistance, RG [] 100
0
20
40
60
80
100
Gate Resistance, RG []
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1500
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
1000
Switching Time [ns]
tr
Switching Time [ns]
TC = 125 C
TC = 125 C tf
100
td(on)
td(off)
10 5 10 20 30 40 45
Collector Current, IC [A]
100 5 10 20 30 40 45
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
10000
Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25 C TC = 125 C
o o
Figure 16. Switching Loss vs. Collector Current
10000
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Eoff
Switching Loss [J]
Switching Loss [J]
TC = 125 C
Eoff
1000
Eon
1000
Eon
100
200
30
0 20 40 60 80 Gate Resistance, RG [] 100
0
10
20
30
40
50
Collector Current, IC [A]
Figure 17. Turn off Switching SOA Characteristics
100
Figure 18. Forward Characteristics
30
10
Collector Current, IC [A]
Forward Current, IF [A]
TJ = 125 C
o
TJ = 25 C
o
10
1
Safe Operating Area o VGE = 15V, TC = 125 C
TC = 25 C TC = 125 C
o
o
1 1 10 100 1000 2000 Collector-Emitter Voltage, VCE [V]
0.1 0.0
0.5 1.0 1.5 Forward Voltage, VF [V]
2.0
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Recovery Current
60
Reverse Recovery Currnet, Irr [A]
Figure 20. Stored Charge
30
Stored Recovery Charge, Qrr [C]
50
200A/s
20
200A/s
40
di/dt = 100A/s
di/dt = 100A/s
10
30
20 10
15 20 25 Forward Current, IF [A]
30
0 10
15
20
25
30
Forward Current, IF [A]
Figure 21. Reverse Recovery Time
1200
Reverse Recovery Time, trr [ns]
1000
di/dt = 100A/s
800
200A/s
600
400 10
15
20
25
30
Forward Current, IF [A]
Figure 22. Transient Thermal Impedance of IGBT
1 Thermal Response [Zthjc]
0.5
0.1
0.2 0.1 0.05 0.02 0.01 single pulse
0.01
PDM t1 t2
Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC
1E-3 1E-5
1E-4
1E-3 0.01 0.1 Rectangular Pulse Duration [sec]
1
10
FGA25N120FTD Rev. A
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
Mechanical Dimensions
TO-3PN
Dimensions in Millimeters
FGA25N120FTD Rev. A
8
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FGA25N120FTD 1200V, 25A Field Stop Trench IGBT
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGA25N120FTD Rev. A
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